Semiconductor device and test device for same

ABSTRACT

Realized is a semiconductor device that test can be effectively conducted by the test device even where the semiconductor device is reduced in chip size and hence pad pitch. A plurality of pads are formed on both ends of a semiconductor substrate. An input pad group is arranged at a left end side of the semiconductor device while an input/output pad groups are arranged at a right end side thereof. A BIST circuit is arranged at an upper right area of the semiconductor device, and the pads close to the BIST circuit serve as BIST exclusive pads. Because the area for arranging the pads for BIST is limited due to the increase of input pads and the like and all the pads for BIST cannot be arranged at one end of the semiconductor device, the BIST pads are separately provided in both ends of the semiconductor substrate. Those close to the BIST circuit are provided as exclusive pads while the others are as common-use pads. The pads 3 a  and 3 b  are separated to the upper and lower areas of the semiconductor device. There is no need to form a multiplicity of beams only in the upper or lower area of a test device, thus eliminating a problem of strength and a difficulty in fabrication.

BACKGROUND OF THE INVENTION

[0001] 1. Technical Field of the Invention

[0002] The present invention relates to a semiconductor device and test device for same.

[0003] 2. Description of the Related art

[0004] There is an increased demand for the integration increase in semiconductor devices while reflecting the increase of the mount density and functions in the electronic appliances using semiconductor devices.

[0005] The integration increase on a semiconductor device, in general, is achieved by the scale-down of the circuit elements configuring the semiconductor device. Namely, integration increase is done by micro-fabricating the interconnections, connection holes and the like configuring the circuit elements.

[0006] On the other hand, in order to reduce the cost and improve the yield of semiconductor devices, there is a need for a technology to increase the number of semiconductor chips formed on one wafer to a possible extent. Namely, there is a necessity for a technology to optimize, for scale-down, the design and manufacture process such that the circuits for the same function are realized within a possible small chip area.

[0007] For a product group in the same generation realizing the same function, e.g. DRAM (Dynamic Random Access Memory), the design is under a comparatively relaxed condition of design rule in an early stage of placement into the market. Consequently, chip size is comparatively great and cost is somewhat high correspondingly.

[0008] However, in the middle or later stage of placement into the market, chip size is reduced as a result of effort for scale-down. Thus, simultaneous achievement is made on cost reduction per chip and yield improvement.

[0009] Such chip-size reduction is made over several times on a product group in the same generation. Furthermore, chip-size reduction is repeated from generation to generation. As a result, reduction is simultaneously done for the interconnect pattern on the chip surface. Due to this, reduction is natural on the size and pitch of the test pads for testing semiconductor devices.

[0010] In this manner, by the increase of test pads due to the increase of chip count per wafer, there is a tendency toward a difficulty in test with the existing test method.

[0011] Under such a circumstance, as described in JP-A-11-27451, there is a development of a method that probes, beams, interconnections and secondary pads are formed on the same silicon substrate, as a testing substrate, as that of a semiconductor device so that the projecting probes respectively formed on the beams are contacted with a predetermined pad formed on the semiconductor device thereby conducting a test.

[0012] Meanwhile, as described in JP-A-2000-227459, there is a devising that a BIST (Built-In Self Test) circuit is incorporated on a semiconductor chip to enable a simplified test.

[0013] However, there is a further demand for the integration increase on the semiconductor device. Due to the increase of pad count and the reduction of arrangement area, further reduction is required for pad pitch. However, there is a fear of difficulty in fabricating a testing substrate for a test device capable of coping with the pad pitch reduction in the semiconductor devices.

[0014] Namely, although the semiconductor-device test device is formed with probes, beams, interconnections and secondary electrode pads on a silicon substrate thereof as noted above, there is a need to narrow the width of the beam due to the pad pitch reduction in a probe semiconductor device. The pad arrangement, if remains as in the conventional, causes a problem of strength and difficulty in fabrication of the beams formed correspondingly.

[0015] It is an object of the present invention to realize a semiconductor device that test is effectively possible by the test device even where the semiconductor device is reduced in chip size and hence pad pitch.

SUMMARY OF THE INVENTION

[0016] In order to achieve the above object, the present invention is structure, as follows.

[0017] (1) In a semiconductor device having a plurality of input/output pads on a main surface of a semiconductor substrate, the semiconductor device characterized in that: the plurality of input/output pads are arranged, at least in one line, separately on both ends of the main surface; the plurality of pads including a plurality of testing pads for use in electrical test of the semiconductor device; the testing pads being separated into two groups; the two-separated testing pads being respectively included in a plurality of pads formed in areas in a diagonal arrangement relationship as the main surface is divided into four areas each including one of four corners thereof.

[0018] (2) In a test device for conducting a test of a semiconductor device having a substrate having a plurality of beams, probes respectively formed on the beams to contact electrical testing pads formed on a semiconductor device, and a plurality of secondary electrode pads for input/output signals electrically connected to the probes through connection lines, the test device for a semiconductor device characterized in that: the beams in plurality being divided into two groups; the probes being formed to position in areas in a diagonal arrangement relationship that are end areas of the substrate as the substrate is divided into four areas each including one of four corners thereof.

[0019] (3) In a test device for conducting a test on a semiconductor device having a substrate having a plurality of beams, probes respectively formed on the beams to contact electrical testing pads formed on a semiconductor device, and a plurality of secondary electrode pads for input/output signals electrically connected to the probes through connection lines, the test device for a semiconductor device characterized in that: the beams in plurality being divided into two groups; the probes being formed to position in areas in a diagonal arrangement relationship that are close to a center area of the substrate as the substrate is divided into four areas each including one of four corners thereof.

[0020] (4) In a semiconductor device having a plurality of input/output pads on a main surface of a semiconductor substrate, the semiconductor device characterized in that: the plurality of input/output pads are arranged at least in one line separately on both ends of the main surface; the plurality of pads including a plurality of testing pads for use in electrical test of the semiconductor device; the testing pads being separated into two groups; the two-separated testing pads being respectively included in a plurality of pads formed in areas in a diagonal arrangement relationship as the main surface is divided into four areas each including one of four corners thereof; probe-contacting pads being formed in one line arrangement in a center area of the main surface and electrically connected to the testing pads, to be contacted with testing probes of a test device.

[0021] (5) In a test device for conducting a test on a semiconductor device having a substrate having a plurality of beams, probes respectively formed on the beams to contact electrical testing pads formed on a semiconductor device, and a plurality of secondary electrode pads for input/output signals electrically connected to the probes through connection lines, the test device for a semiconductor device characterized in that: the plurality of beams are formed on a center area of the substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

[0022]FIG. 1 is an explanatory view on a pad position of a semiconductor device of one embodiment of the present invention;

[0023]FIG. 2 is a plan view of a test device of one embodiment of the invention as viewed at one surface thereof;

[0024]FIG. 3 is a plan view of the test device of one embodiment of the invention as viewed at the other surface thereof;

[0025]FIG. 4 is an explanatory view of a test device of another embodiment of the invention;

[0026]FIG. 5 is a plan view of the test device of the other embodiment of the invention as viewed at one surface thereof;

[0027]FIG. 6 is a plan view of the test device of the other embodiment of the invention as viewed at the other surface thereof;

[0028]FIG. 7 is an explanatory view on a pad position of a semiconductor device of the other embodiment of the invention;

[0029]FIG. 8 is a plan view of a test device of still another embodiment of the invention as viewed at one surface thereof; and

[0030]FIG. 9 is a plan view of the test device of the still other embodiment of the invention as viewed at the other surface thereof.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0031] Explanation will now be made on preferred embodiments according to the present invention, with reference to the accompanying drawings.

[0032]FIG. 1 is an explanatory view explaining a pad position of a semiconductor device as one embodiment of the invention. In FIG. 1, a plurality of pads 2 a, 2 b are formed in one line at each of both ends on a main surface of a semiconductor substrate 1. This is a separate arrangement of a plurality of pads at the both ends, in order to cope with the pad count increase and pad pitch decrease due to scale-down of the semiconductor device with increased circuit elements.

[0033] Thus, an input pad group 2 a is arranged at a left end of the semiconductor device 1 while an input pad group 2 b is at a right end of the semiconductor device 1.

[0034] A BIST (Built-In Self Test) circuit 10 is arranged at an upper left area of the semiconductor device 1 of FIG. 1. The pads positioned close to the BIST circuit 10 serve as BIST exclusive pads 3 a.

[0035] Herein, there is a necessity to provide a multiplicity of BIST pads. However, the area for arranging BIST pads is restricted by the increase of input pads or so. It is impossible to arrange all the BIST pads in one line at one end side of the semiconductor device 1.

[0036] For this reason, the arrangement area of BIST pads is divided to the both ends of the semiconductor device. Furthermore, those arranged close to the BIST circuit 10 are given as BIST exclusive pads 3 a while those arranged in the other area are as pads 3 b for common use for both of BIST and the other application.

[0037] Furthermore, the BIST exclusive pads 3 a and 3 b are separately arranged in the upper and lower areas of the semiconductor device 1. Consequently, the BIST exclusive pads 3 a are arranged in the upper left area of the semiconductor device 1. The common-use pads 3 b are arranged in the lower right area of the semiconductor device 1.

[0038] This is because of the following reason. Namely, in case the BIST exclusive pads 3 a be arranged in the upper left area of the semiconductor device 1 and the common-use pads 3 b in the upper right area of the semiconductor device 1, both the beams forming a probe on a test device to contact the pad 3 a and the beams forming a probe to contact the pad 3 b must be formed in an upper area of the test device formed by a silicon substrate.

[0039] The beams in multiplicity, if all formed in the upper area of the test device, poses a problem of strength and difficulty in test device fabrication.

[0040] For this reason, the BIST exclusive pads 3 a are arranged in the upper left area of the semiconductor device 1 while the common-use pads 3 b are in the lower right area of the semiconductor device 1. Due to this, the beams in multiplicity of the test device are separately arranged in the upper left area and the lower right area of the silicon substrate. This eliminates the necessity to form a multiplicity of beams only in the upper or lower area of the silicon substrate of the test device. This can eliminate the problem of strength and further the difficulty in test device fabrication.

[0041] Herein, the upper left area refers to an end-sided area in a position of a distance of from a one-pad length to a one-to-two pad length as measured from a left end surface of the semiconductor substrate 1 of FIG. 1, which is an upper area where the semiconductor substrate 1 is vertically divided into two in FIG. 1.

[0042] Meanwhile, the lower right area refers to an end-sided area in a position of a distance of from a one-pad length to a one-to-two pad length as measured from a right end surface of the semiconductor substrate 1 of FIG. 1, which is a lower area where the semiconductor substrate 1 is vertically divided into two in FIG. 1.

[0043] Accordingly, the pads 3 a and 3 b are included in respective pad groups formed in a diagonal positional relationship where the main surface of the semiconductor substrate 1 is divided into four regions each including one of the four corners of the main surface.

[0044]FIG. 2 is a plan view of a test device as one embodiment of the invention as viewed at one surface thereof. Meanwhile, FIG. 3 is a plan view of the test device of the embodiment of the invention as viewed at the other surface thereof.

[0045] In FIG. 3, a plurality of beams are formed separately in the upper left area and in the lower right area on the other surface of the silicon substrate 4. Probes 5 are formed respectively on these beams. These probes 5 are arranged in the positions corresponding to the BIST exclusive pads 3 a and common-use pads 3 b such they are to be contacted with the pads 3 a and the pads 3 b.

[0046] Each probe 5 is connected to a metal line 9, and the metal line 9 extends to the one surface of the silicon substrate 4 via a through-hole 7.

[0047] As shown in FIG. 2, the metal line 9 is connected to a secondary electrode pad 8. The secondary electrode pad 8 is to be supplied with a test signal from a test signal generator circuit (not shown).

[0048] In the meanwhile, the semiconductor device in general undergoes a test as in the following, wherein the test is to be conducted by providing conduction between the test pads 3 a, 3 b in plurality formed on the semiconductor substrate and a tester.

[0049] There are included a test for conduction on a signal of each element, called P-test, and a test of applying a thermal electric stress to a circuit to accelerate-select an abnormality, called bar-in. P-test usually uses a probe device, to contact the probes, one by one, to an electrode pad of a circuit.

[0050] On the other hand, in bar-in test, the use of a BIST circuit 10 makes it possible to reduce the pads required in the test to nearly six per chip. The BIST circuit refers to a circuit for test previously fabricated in a semiconductor device itself. This, herein, is a circuit for collectively extending out power-source and signal lines minimally required in the test.

[0051] The test as in the above is conducted with a test device shown in FIGS. 2 and 3.

[0052] As described in the above, according to the semiconductor device of the embodiment of the invention, a plurality of input/output pads are arranged separately in the opposite ends of a semiconductor device. Of these pads in multiplicity, the arrangement area of BIST pads are separately provided in an upper area at one end of the semiconductor device and in a lower area at the other end thereof. The BIST pads arranged in one area are to be used common to the other application.

[0053] Due to this, even where a semiconductor device is reduced in chip size and hence in pad pitch, realized is a semiconductor device allowed for effective test by the use of a test device.

[0054] Meanwhile, in a test device for a semiconductor device, by arranging a multiplicity of beams separately in the upper left area of the silicon substrate and in the lower right area, i.e. by dividing a multiplicity of beams into two groups so that, when the silicon substrate is divided into four areas each including one of the four corners thereof, probes are formed positioned in end areas in a diagonal relationship of the silicon substrate. Due to this, there is no need to form the multiplicity of beams only in the upper or lower area of the silicon substrate. This can eliminate the problem of strength and difficulty in test device fabrication.

[0055] Accordingly, for a semiconductor device reduced in chip size and hence in pad pitch, realized is a test device capable of conducting an effective test.

[0056] In the meanwhile, in the recent is adopted a scheme for collectively conducting tests on a plurality of semiconductor devices by the use of a plurality of test devices, i.e. a scheme for testing a plurality of semiconductor devices on a wafer prior to cut into chips by means of a plurality of test devices.

[0057] Explanation, in this case, will be made on a test device as another embodiment of the invention.

[0058]FIG. 4 is an explanatory view in a state of a test on a plurality of arrangement of the semiconductor devices 1 of the embodiment of the invention.

[0059] The semiconductor devices 1 in plurality are arranged adjacent to one another. By one test device, test is conducted with the common-use pads 3 b of one semiconductor device 1 and with the BIST exclusive pads 3 a of another semiconductor device 1.

[0060]FIG. 5 is a plan view of one surface of a test device of another embodiment of the invention. FIG. 6 is a plan view of the other surface of the test device of that other embodiment of the invention.

[0061] In FIG. 6, a plurality of beams 6 are formed separately in a central upper left area and in a central lower right area on the other surface of the silicon substrate 4. The beams 6 in plurality are formed with respective probes 5. The probes 5 in plurality are arranged in the positions corresponding to pads 3 a and 3 b such that they can be contacted with the BIST exclusive pads 3 a of the one semiconductor device 3 a and the common-use pads 3 b of the other semiconductor device 1.

[0062] Namely, the beams 6 in plurality are divided into two groups and formed such that, when the substrate is divided into four areas each including one of the four corners of the substrate 4, the probes 5 are positioned in the areas in a diagonal arrangement relationship positioned close to the center area of the substrate.

[0063] Each probe 5 is connected to a metal line 9, and the metal line 9 extends to the one surface of the silicon substrate 4 via a through-hole 7.

[0064] As shown in FIG. 5, the metal line 9 is connected to a secondary electrode pad 8 arranged on the both ends of the silicon substrate 4. The secondary electrode pads 8 is to be supplied with a test signal from a test signal generator circuit (not shown).

[0065] As described above, according to the test device of the other embodiment, a test device can be realized which is capable of conducting an effective test even on a semiconductor device reduced in chip size and hence in pad pitch.

[0066]FIG. 7 is an explanatory view of a pad position on a semiconductor device as another embodiment of the invention. In FIG. 7, a plurality of pads 2 a, 2 b are formed at both ends of a semiconductor substrate 1.

[0067] In a center area of the semiconductor device 1, there are formed BIST exclusive pads 3 a (pads for probe contact) and common-use pads 3 b (pads for probe contact). The BIST exclusive pads 3 a are connected to the pads 2 a in the upper left area of the semiconductor device 1 by lines 10. The common-use pads 3 b are connected to the pads 2 b in the lower right area of the semiconductor device 1 by lines 10.

[0068] The FIG. 7 example is an example on a case that there is a free space existing in the center area of the semiconductor device 1 to form pads 3 a, 3 b or a re-interconnection layer is further formed on a semiconductor device to enable the formation of pads in a center area of the semiconductor device as in a WPP (Wafer Process Package).

[0069]FIG. 8 is a test device for testing a semiconductor device shown in FIG. 1, which is a plan view on one surface of a test device as still another embodiment of the invention. FIG. 9 is a plan view on the other surface of the test device shown in FIG. 8.

[0070] In FIG. 9, a plurality of beams 6 are formed in a center area on the other surface of the silicon substrate 4. The beams 6 in plurality are formed with respective probes 5. These probes 5 are arranged in a position corresponding to the pads 3 a and 3 b such that they can be contacted with the BIS exclusive pad 3 a and common-use pads 3 b of the semiconductor device 1.

[0071] Each probe 5 is connected to a metal line 9, and the metal line 9 extends to the one surface of the silicon substrate 4 via a through-hole 7.

[0072] As shown in FIG. 8, the metal line 9 is connected to a secondary electrode pad 8 arranged in both ends of the silicon substrate 4. The secondary electrode pad 8 is to be supplied with a test signal from a test signal generator circuit (not shown).

[0073] As described above, according to the test device of the other embodiment, a test device can be realized which is capable of conducting an effective test even on a semiconductor device reduced in chip size and hence in pad pitch.

[0074] Also, a test device can be realized which is capable of conducting an effective test even for a semiconductor device reduced in chip size and hence in pad pitch.

[0075] Meanwhile, according to a test device of the still other embodiment of the invention, because the beams 6 in multiplicity are formed without separation into two locations, it is possible to decrease a test device entire area and secure a much more positioning space for test.

[0076] Incidentally, in the semiconductor device as the embodiment of the invention, the input/output pad groups 2 a, 2 b are determined in their pad-forming area and the number of pads to be formed depending upon to what position they can be formed from an end surface of the semiconductor substrate 2. In the embodiment of the invention, the area for forming the pads can be provided to a one-pad length of from an end surface of the semiconductor substrate 2.

[0077] According to the present invention, even for a semiconductor device reduced in chip size and hence in pad pitch, a semiconductor device and test device for same can be realized which is capable of effectively conducting a test by a test device. 

What is claimed:
 1. A semiconductor device comprising: a semiconductor substrate, wherein said semiconductor substrate is a quadrangle; a self test circuit formed on said semiconductor substrate; and a plurality of pads which are formed on said semiconductor substrate, wherein said plurality of pads are coupled at least to said self test circuit, wherein said semiconductor substrate includes four rectangular or square regions which each include a respective corner of said quadrangle, and wherein at least two of said pads are respectively located on diagonally opposite ones of said regions from one another.
 2. A semiconductor device according to claim 1, wherein each of said plurality of pads is formed in a line parallel to a side of said quadrangle.
 3. A semiconductor device according to claim 1, wherein at least two additional pads are respectively connected to said at least two pads, and wherein said at least two additional pads are formed in a line in a central region of said semiconductor substrate.
 4. A semiconductor testing apparatus comprising: a semiconductor substrate, wherein said semiconductor substrate is a quadrangle; a plurality of beams formed on said semiconductor substrate; a plurality of probes, wherein each of said probes is formed on a corresponding one of said beams; and a plurality of secondary pads each electrically connected to a corresponding one of said probes, wherein said semiconductor substrate includes four rectangular or square regions which each include a respective corner of said quadrangle, and wherein at least two of said probes are located on diagonally opposite ones of said regions from one another.
 5. A semiconductor testing apparatus according to claim 4, wherein each of said plurality of probes is formed in a line parallel to a side of said quadrangle.
 6. A semiconductor testing apparatus comprising: a semiconductor substrate, wherein said semiconductor substrate is a quadrangle, wherein a first side of said quadrangle and a third side of said quadrangle are parallel to one another and a second side of said quadrangle and a fourth side of said quadrangle are parallel to one another; first and second groups of beams formed on said semiconductor substrate; first and second groups of probes, wherein each of said probes is formed on a corresponding one of said beams; and a plurality of secondary pads each electrically connected to a corresponding one of said probes, wherein said semiconductor substrate includes first and second quadrangular regions formed by using a line parallel to said first side to divide said quadrangle, and wherein said first group of beams and said first group of probes are located in a central area of said first quadrangular region, wherein said second group of beams and said second group of probes are located in a central area of said second quadrangular region, and wherein said first group of probes are located closer to said second side than said second group of probes, and wherein said second group of probes are located closer to the fourth side than the first group of probes.
 7. A semiconductor device comprising: a semiconductor substrate, wherein said semiconductor substrate is a quadrangle, wherein a first side of said quadrangle and a third side of said quadrangle are parallel to one another and a second side of said quadrangle and a fourth side of said quadrangle are parallel to one another; a self test circuit formed on said semiconductor substrate; a plurality of pads which are formed on said semiconductor substrate, wherein said plurality of pads are coupled to at least said self test circuit; wherein said semiconductor substrate includes first and second quadrangular regions formed by using a line parallel to said first side to divide said quadrangle, and wherein at least one of said pads is formed on said first quadrangular region in an area adjacent to a corner of the quadrangle formed by said first and second sides of said quadrangle, and wherein at least another one of said pads is formed on said second quadrangular region in an area adjacent to a corner formed by said third and fourth sides of said quadrangle.
 8. A semiconductor testing apparatus comprising: a semiconductor substrate, wherein said semiconductor substrate is a quadrangle, wherein a first side of said quadrangle and a third side of said quadrangle are parallel to one another and a second side of said quadrangle and a fourth side of said quadrangle are parallel to one another; a plurality of beams formed on said semiconductor substrate; a plurality of probes, wherein each of said probes is formed on a corresponding one of said beams; and a plurality of second pads each electrically connected to a corresponding one of said probes, wherein said semiconductor substrate includes first and second quadrangular regions formed by using a line parallel to said first side to divide said quadrangle and wherein at least one of said probes is formed on said first quadrangular region in an area adjacent to a corner of the quadrangle formed by said first and second sides, and wherein at least another one of said probes is formed on said second quadrangular region in an area adjacent to a corner formed by said third and fourth sides of said quadrangle. 